ABSTRACT
Single crystalline 3C-SiC has been grown on 15R-SiC substrates up to 60 μm of thickness. A single domain region with a size of more than 2 mm x 2 mm was obtained. The full width at half maximum in X-ray θ — 2θ method was 20 sec. In low-temperature photoluminescence of grown layer, sharp peaks near the band edge are dominant and free exciton peaks were observed up to 130 K. This suggests high purity of the 3C-SiC epilayer on 15R-SiC.
