ABSTRACT
The electrical properties of an AIN cap deposited on a Al0.14Ga0.86N surface is studied experimentally. The carrier concentration as a function of the distance from the sample surface is probed by means of C-V profiling technique. We found that a thin AIN cap did not improve the isolation of the Schottky gate. Instead, a carrier accumulation at the AlN/Al0.14Ga0.86N interface degrading the Schottky properties occurred.
