ABSTRACT
We have successfully grown nanometer-scale InGaN selfassembling quantum dots (QDs) on a GaN surface without any surfactants, using atmospheric-pressure metal organic chemical vapor deposition. We have systematically investigated the dependence of InGaN QDs on the deposited amount and the growth temperature. Atomic force microscopy shows that the average diameter of InGaN QDs is reduced to be 8.4 nm, by carefully choosing the growth conditions, and the density of the QDs is varied in the wide range from 1 x 109cm-2 to 2 x 1010cm"2.
