ABSTRACT
Hall-effect and cathodoluminescence (CL) measurements have been made for high temperature (500 °C) P+ - and N+-implanted n-type 4H-SiC to assess the activation efficiency and implantation-related damage recovery. Hall-effect measurement results indicate optimum anneal temperatures of ~ 1400 and ~1600 °C, and activation efficiencies of 90 and 33% for the N- and P-implanted n-type 4H-SiC, respectively. Hall mobilities in both N- and P-implanted samples increase with anneal temperature from 1400 to 1800 °C. The CL spectra from the N-implanted n-SiC showed no near bandedge N-associated zero phonon lines (ZPL) at 3.24 eV, which is due to the residual nitrogen in n-SiC, though the CL spectra from the P-implanted n-SiC contained the near bandedge ZPL, but very weak. A ZPL pair at 2.63 eV and its phonon replica were found for the SiC:N. The 2.63 eV peak pair is believed to be related to a nitrogen-complex formed during implantation/annealing. The CL spectra for the SiC:P contained a ZPL pair at 2.91 eV, which is believed to be damage-related, and its associated phonon replica spectra. For both donor implanted samples, phonon energies of 37, 68.5, 82.5, and 108 meV were obtained from the ZPL peak pairs and respective phonon replica spectra.
