Mg doping in the MOVPE of In nitrogen or hydrogen ambient using CpMg

This paper reports on the influence of the ambient nitrogen in comparison to hydrogen on magnesium doping in the LP-MOVPE of AlInP using the dopant Cp₂Mg. To this end the carrier and Mg concentration were studied as a function of the dopant supply, the growth temperature and the V/III ratio for both ambients. Growth was optimized with regard to achieving high carrier concentrations. The Mg concentration as well as the carrier concentration obtained were higher for nitrogen carrier gas. Reasons for this observation are discussed.