Extended defect reduction in GaN laterally overgrown on Si(lll)

Extended defect reduction in GaN grown by lateral epitaxial overgrowth (LEO) on Si(lll) substrates using an AIN buffer layer is demonstrated and characterized using scanning electron microscopy, transmission electron microscopy, x-ray diffraction, and atomic force microscopy. The https://www.w3.org/1998/Math/MathML"> < 1 1 ¯ 00 > https://s3-euw1-ap-pe-df-pch-content-public-p.s3.eu-west-1.amazonaws.com/9781003063100/ce4a879a-688a-4c77-a95b-e9b91ed32a4e/content/inline-math164.tif" xmlns:xlink="https://www.w3.org/1999/xlink"/> -oriented LEO GaN stripes grown on silicon substrates are shown to have similar structural properties as LEO GaN grown on GaN/Al₂O₃ substrates: the dislocation density is <10⁶ cm^-'2, and the surface topography is characterized by continuous crystallographic steps rather than by steps terminated by screw-component threading dislocations.