Photoassisted anodic etching of n-GaN films in NaOH electrolyte ~ dependence of carrier concentration of GaN film

Photoassisted anodic etching, of high quality GaN films using a sodium hydroxide (NaOH) electrolyte was reported. Factors such as the carrier concentration of GaN film affecting the photoassisted anodic etching of GaN film are discussed. It was found that photoassisted anodic etching of n-GaN film in NaOH electrolyte strongly depended on the carrier concentration of GaN film. Furthermore, it was also found for the first time that a high-quality GaN film with a carrier concentration of 10¹⁶cm^-3 was observed hexagonal etch pits on the etched surface.