Studies of InAs(111) and GaSb(111) thin films grown on LiTaO3 (110) substrate by XRD

We present here for the first time the successful growth of high quality single phase InAs(111) and GaSb(111) films on LiTaO₃(110) substrate by MBE investigated by X-ray diffraction (XRD) and Hall effect technique. By using a 50nm thick GaAs_1-xSb_x buffer grown at 200C on LiTaO₃(110) substrate followed by a GaAs_1-xSb_x/GaSb superlattice buffer grown at about 420C where x~0.9. single phase InAs(111) films of about 200nm thick could be grown with room temperature mobilities as high as 4130 cm²/VS. P-type GaSb(111) films of about lOOnm thick could also be grown using a similar method, exhibiting hole concentrations of about 7×10¹⁶ cm^-3 and mobilities of 230 cm²/VS at room temperature. These encouraging results suggest the possible fabrication of high efficient field effect surface acoustic wave amplifier (FESAWAMP)[3] for wireless communication applications.