ABSTRACT
In this paper, we report the recent advances in uncooled infrared photodetectors using III-V narrow bandgap semiconductors. Benefiting from their superior material properties, III-V alloys provide many advantages over the current leading II-VI systems in the uncooled infrared photodetector applications. We present an overview on the growth and demonstration of uncooled photodetectors using bulk InSb, InAsSb, InTlSb, and InSbBi layers. Incorporation of As, Tl, and Bi into InSb resulted in a reduced bandgap thus extending the detection cutoff wavelength to longwavelength infrared region. To further extend the capability of III-V material system, room temperature operation of photodetectors based on InAs/GaSb type-II superlattices have also been demonstrated.
