Bistability of electroluminescence in In0.52Al0.48As/ AlAs0.56Sb0.44 type II multiple quantum well diodes

Eectroluminescence (EL) of In_0.52Al_0.48As/AlAs_0.56Sb_0.44 type II multiple quantum well (MQW) diodes was studied. A 920 nm below gap light emission from the type II heterointerface was observed at 100 K in addition to the emission from the InAlAs cladding layer. Furthermore, it was found that the MQW diode shows a remarkable bistable behavior in the current-light output (I-L) characteristic.