ABSTRACT
This paper reports the 1-MeV radiation response of high efficiency InGaP/GaAs tandem solar cells with a world-record AMO efficiency of 26.9 %. Analysis of the radiation data shows that InGaP/GaAs tandem cell is the same resistant to radiation as GaAs single-junction cells grown on Ge substrates. Minority-carrier injection enhanced annealing causes a decrease in the number of defects in InGaP layer induced by electron irradiation. A pronounced recovery of the tandem cells has been confirmed due to minority-carrier injection under light illumination or forward bias.
