I-V characteristics and two-dimensional electron gas transport properties above room temperature in gate-controlled Al0.15Ga0.85N/GaN heterostructure

We have measured both the I-V characteristics and the Hall effect in the Al_0.15Ga_0.85N/GaN heterostructutre under the gate-voltage application from 30 to 400 K. Specific features characteristic of this material system have been observed, i.e., (i) improved pinch-off characteristics at high temperatures, (ii) very small degradation characteristics in the mobility (μ) at high electron densities (N _s ) at high temperatures, and (iii) very large N _sμ products ( > 10¹⁶ (Vs)^-1 ) at 300 K. These are the features favorable for high-power and high-temperature device operations in the devices of this material system.