ABSTRACT
Optical properties of strained InAs/AlInSb type-II superlattices were characterized. We compare the temperature dependence of the photoluminescence intensity between (InAs)m/(Al0.8ln0.2Sb)m (m = 8, 10, 12, and 14 ML) and (InAs)m/[Al(Ga)Sb]m superlattices in order to investigate how the strain affects the photoluminescence properties. The peak intensity decreased as the temperature increased and the reduction was much pronounced for the unstrained In As/AlGaSb superlattices indicating that the introduction of strain is effective to suppress the Auger processes. However, we found that the reduced luminescence is not caused by the increase in the activation energy of the Auger recombination process but resulted from the increase in the Auger recombination coefficient.
