Temperature dependent carrier transfer in GaAs quantum wells (QWs) grown on mesa-patterned substrates with molecular beam epitaxy was studied by high-spatial resolution microscopic photoluminescence imaging and spectroscopy using a solid immersion lens. We observed spatial distribution of the quantization energy in the QWs and excitation-position-dependent and anisotropic carrier migration. Under uniform excitation, strong PL was observed along the edges on the mesa-stripe, which was well explained by the anisotropic carrier migration.