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      Magnetophotoluminescence in n- and p-type Si-modulation-doped AlGaAs/GaAs single-heterostructures
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      Chapter

      Magnetophotoluminescence in n- and p-type Si-modulation-doped AlGaAs/GaAs single-heterostructures

      DOI link for Magnetophotoluminescence in n- and p-type Si-modulation-doped AlGaAs/GaAs single-heterostructures

      Magnetophotoluminescence in n- and p-type Si-modulation-doped AlGaAs/GaAs single-heterostructures book

      Magnetophotoluminescence in n- and p-type Si-modulation-doped AlGaAs/GaAs single-heterostructures

      DOI link for Magnetophotoluminescence in n- and p-type Si-modulation-doped AlGaAs/GaAs single-heterostructures

      Magnetophotoluminescence in n- and p-type Si-modulation-doped AlGaAs/GaAs single-heterostructures book

      ByK Suzuki, K Saito, K Muraki, Y Hirayama
      BookCompound Semiconductors 1998

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      Edition 1st Edition
      First Published 1999
      Imprint CRC Press
      Pages 6
      eBook ISBN 9781003063100
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      ABSTRACT

      Si-modulation-doped AlGaAs/GaAs heterostructures, which are grown on (100) and (311)A GaAs substrates, behave n- and p-type modulation-doped structures, respectively. We measure magnetophotoluminescence (MPL) spectra and discuss the difference of the carrier recombinations in these structures. Both n- and p-type structures show the MPL spectra reflecting the Landau level quantization. Though interband transitions coming from the ground subband are suppressed for ν >2 in the n-type, this rule is broken in the p-type.

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