Characterisation of the effects of Al incorporation in AlGaInP light emitters

The results from Photoluminescence (PL) and Time Resolved PL (TRPL) measurements have been used to determine the relative importance of different earner recombination and loss processes in (Al_xGai_1-x)₀.₅₁In_0.49P heterostructures as a function of the A1 fraction (x). From an Arrhenius analysis of the temperature dependence of the minority carrier lifetime and PL intensity measurements as a function of hydrostatic pressure, we can distinguish between thermally activated carrier losses into the indirect conduction band and non-radiative recombination via A1 related impurities in the active region.