ABSTRACT
We have investigated thermal stability of Er-related photoluminescence (PL) due to intra-4f shell transitions of Er3+ doped in InP (InP:Er) by OMVPE growth. The spectral shape and PL intensity of the Er-related emission are unaffected by post-growth annealing, while the PL intensity in as-grown samples is found to be strongly dependent on the growth temperature. The fluorescence-detected extended x-ray absorption fine structure (EXAFS) analysis reveals successfully that atom configurations around Er atoms are also stable against the post-growth annealing. These results indicate that atom configurations responsible for the luminescence are formed on the growing surface, not during the post annealing in InP growth.
