First Demonstration of AlGaN/GaN Heterostructure Field Effect Transistor on GaN grown by lateral epitaxial overgrowth (LEO)

doi:10.1201/9781003063100-28

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First Demonstration of AlGaN/GaN Heterostructure Field Effect Transistor on GaN grown by lateral epitaxial overgrowth (LEO)

ABSTRACT

We have fabricated AlGaN/GaN HFETs on nearly dislocation free GaN grown on sapphire using the lateral epitaxial overgrowth (LEO) technique. HFETs on LEO GaN showed substantially lower gate leakage (up to two orders of magnitude) over HFETs on regular GaN.