ABSTRACT
76GHz-band InAlAs/pseudomorphic InGaAs on InP MMICs
for millimeter-wave radar have been developed. HEMTs for the active device of MMICs obtained their maximum available gain of 8dB at 76GHz by using a 0.5 μ m rectangular gate, because of the high electron mobility and high electron density of the heterostructure used by us. The transmitter and receiver MMICs have been prepared by integrating HEMTs and coplanar waveguide passive elements. The oscillation frequency of the transmitter is controlled linearly between 76.2 and 77.0GHz. These MMICs have achieved capabilities sufficient for use in the 76GHz band radar system.
