ABSTRACT
We have developed an ‘in-house' MMIC process based on a microstrip InP HEMT technology for millimeter wave applications. The process includes InP-HEMT transistors with a cutoff frequency fT of 103 GHz, maximum frequency fmax of 290 GHz, microstrip transmission lines, ground via holes, and mesa resistors. The performance of the transistors are described and recent results on various circuits like amplifiers and mixers are reported.
