Single-Voltage-Supply Operation of Ga0.51In0.49P/ In0.15Ga0.85As Doped-Channel FET's for Digital Wireless Communication

We demonstrated, for the first time, single-voltage-supply operation of power FETs using Ga_0.85In_0.49P/In_0.15Ga_0.85As hetero-structures. The device has 1μm gate length and 200pm gate width. Under class A-operation, this power FET showed 14.5dBm (140mW/mm) saturated power with a power added efficiency of 30% when biased at 4.8V and 12.3dBm (87mW/mm) with a power added efficiency of 25% when biased at 3.6V.