ABSTRACT
A low-temperature 0.1-μm gate length direct ion-implanted GaAs E/D MESFET exhibiting excellent dc and microwave characteristics has been developed. Peak transconductances are 463 mS/mm for D-mode devices and 425 mS/mm for Emode devices. The peak unit current gain cut-off frequency ft and the peak maximum oscillation frequency fmax are 121 GHz/ 160 GHz and 91 GHz/ 133 GHz for D- and Emode devices, respectively. This work demonstrated the suitability of 100 GHz E/D mode GaAs MESFETs process for millimeter-wave IC applications.
