Full Band Monte Carlo simulation of a 100 nm 4H-SiC high frequency MOSFET

A study of the properties of a high frequency 100 nm n-MOSFET in 4H-SiC is presented using a full band Monte Carlo simulation program. For the electrons a model is used with four conduction bands obtained from a full potential band structure calculation, based on the Local Density Approximation (LDA) to the Density Functional Theory (DFT). The hole transport is modelled using a three band k*p model including spin orbit interaction. Bulk and surface mobilities obtained with the program are presented. The transconductance, unit current gain frequency and energy distribution in the channel are presented for the simulated component and with different orientations of the charge transport with respect to the c-axis direction.