ABSTRACT
We performed a Monte Carlo simulation of a quasi-one-dimensional electron gas (Q1DEG) in a gated quantum wire structure with closely spaced subbands and a quasi-two-dimensional electron gas (Q2DEG) in a gated single-heterojunction at high temperatures in order to study the effect of dimensionality on the electron mobility. We especially paid attention to use the same physical models, material parameters, and calculation method for Q1DEG and Q2DEG to ensure that only the effect of dimensionality can be extracted from the calculated results. We find that the drift velocity, νd, of Q2DEG is hardly affected by gate voltage, V g, while νd of Q1DEG is strongly influenced by V g.
