ABSTRACT
Separate Hall and conductivity measurements are performed with InAs/GaSb/AlSb quantum wells at 4K, 77K and 300K with electric fields up to 1.4kV/cm in order to understand the source-drain characteristics of InAs quantum well transistors. A decrease of saturation drift velocity with increasing carrier concentration was observed. The carrier concentration dependence is too large to be explained by the dependence of the effective mass on the Fermi energy. The measured saturation drift velocities show that cut-off frequencies fT=v/2πL higher than 200GHz could be obtained with InAs/AlSb FETs having a gate length of L=0.2μm.
