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Photoreflectance study of quantum effects on E1 and E1+Δ1 transitions in GaAs/AlAs superlattices
DOI link for Photoreflectance study of quantum effects on E1 and E1+Δ1 transitions in GaAs/AlAs superlattices
Photoreflectance study of quantum effects on E1 and E1+Δ1 transitions in GaAs/AlAs superlattices book
Photoreflectance study of quantum effects on E1 and E1+Δ1 transitions in GaAs/AlAs superlattices
DOI link for Photoreflectance study of quantum effects on E1 and E1+Δ1 transitions in GaAs/AlAs superlattices
Photoreflectance study of quantum effects on E1 and E1+Δ1 transitions in GaAs/AlAs superlattices book
ABSTRACT
We have systematically investigated the E1 and E1 +Δ1 transitions at the critical point along the [111] direction in (GaAs) m /(A1As) m and (GaAs)10/(AIAs) n superlattices with m = 8-35 and n = 1-14 monolayers by using photoreflectance spectroscopy. In all the superlattices, we have succeeded to detect the E 1 and E 1+Δ1, transitions in addition to the T-point (E 0) transitions. It is found that the layer-thickness dependence of the energies of the E 1 and E 1+Δ1 transitions is similar to that of the quantized T transitions. The experimental results are explained by the calculation in the framework of an effective-mass approximation.