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      Chapter

      Photoreflectance study of quantum effects on E1 and E1+Δ1 transitions in GaAs/AlAs superlattices
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      Chapter

      Photoreflectance study of quantum effects on E1 and E1+Δ1 transitions in GaAs/AlAs superlattices

      DOI link for Photoreflectance study of quantum effects on E1 and E1+Δ1 transitions in GaAs/AlAs superlattices

      Photoreflectance study of quantum effects on E1 and E1+Δ1 transitions in GaAs/AlAs superlattices book

      Photoreflectance study of quantum effects on E1 and E1+Δ1 transitions in GaAs/AlAs superlattices

      DOI link for Photoreflectance study of quantum effects on E1 and E1+Δ1 transitions in GaAs/AlAs superlattices

      Photoreflectance study of quantum effects on E1 and E1+Δ1 transitions in GaAs/AlAs superlattices book

      ByT Nakanishi, K Okajima, M Nakayama, H Nishimura
      BookCompound Semiconductors 1998

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      Edition 1st Edition
      First Published 1999
      Imprint CRC Press
      Pages 6
      eBook ISBN 9781003063100
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      ABSTRACT

      We have systematically investigated the E1 and E1 +Δ1 transitions at the critical point along the [111] direction in (GaAs) m /(A1As) m and (GaAs)10/(AIAs) n superlattices with m = 8-35 and n = 1-14 monolayers by using photoreflectance spectroscopy. In all the superlattices, we have succeeded to detect the E 1 and E 1+Δ1, transitions in addition to the T-point (E 0) transitions. It is found that the layer-thickness dependence of the energies of the E 1 and E 1+Δ1 transitions is similar to that of the quantized T transitions. The experimental results are explained by the calculation in the framework of an effective-mass approximation.

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