We have systematically investigated the E1 and E11 transitions at the critical point along the [111] direction in (GaAs) m /(A1As) m and (GaAs)10/(AIAs) n superlattices with m = 8-35 and n = 1-14 monolayers by using photoreflectance spectroscopy. In all the superlattices, we have succeeded to detect the E 1 and E 11, transitions in addition to the T-point (E 0) transitions. It is found that the layer-thickness dependence of the energies of the E 1 and E 11 transitions is similar to that of the quantized T transitions. The experimental results are explained by the calculation in the framework of an effective-mass approximation.