ABSTRACT
An InxGa1-xN/AlyGa1-yN (x ≅ 0 and y ≅ 0.1-0.15) double-heterostructure ultraviolet light-emitting diode (LED) exhibits an intense electroluminescence band with a linewidth of about 60 meV peaking at 371 nm (3.34 eV) at room temperature. In order to clarify the recombination mechanisms concerned with the 3.34 eV band, magnetoluminescence studies have been carried out at low temperatures in Faraday configuration. It is found that the 3.34 eV band shifts towards higher photon energies with increasing magnetic field. In comparison, we performed the variational calculations on both the binding energies of exciton in an InGaN quantum well as a function of well width and the diamagnetic energy shifts of excitons. The experimentally obtained energy upshifts of the 3.34 eV band can be interpreted in terms of the Landau shift of conduction-band edge rather than the diamagnetic shifts of localized excitons.
