ABSTRACT
Detailed MBE growth experiments were made in order to establish selective MBE growth conditions for formation of <100>-oriented InP-based InGaAs/InAlAs quantum wires on patterned (001) InP substrates. Based on a detailed ridge shape study, arrays of <100>-oriented InGaAs/InAlAs ridge wires were successfully formed metallurgically by selective MBE growth on (001) InP substrates for the first time. The ridge wires showed intense PL emissions originating from the wires themselves. However, their peak positions were largely red-shifted from the lattice-matched value, strongly indicating composition change. The InGaAs wires formed on InGaAs/InAlAs multi-layered buffer layer possessed improved structural uniformity and showed a narrow PL width of 24 meV.
