Migration Enhanced Epitaxial Growth and Photoluminescence Excitation Analysis of GaAs/AlGaAs Quantum Wire Array of Different Wire Widths

The photoluminescence (PL) and PL excitation spectroscopic (PLE) analyses of GaAs/Al_0.5Ga_0.5As quantum wire (QWR) superlattices (SL) having different wire widths L_WR, but the same SL period is to be reported. The QWR arrays are grown on vicinal GaAs substrates of slightly misoriented substrate by migration enhanced epitaxial method (MEE) using MBE system. The peak positions of PL and PLE, and their Stokes' shifts indicate that the L_WR fluctuation is in the units of one GaAs unit cell (i.e., 2 GaAs molecules), when the sublevel energy is assumed to roughly depend on the inverse of L_WR ². This may be a characteristic of MEE. Also reported are the effective mass of the ground state exciton obtained from magnetic field dependent PL.