ABSTRACT
Schottky in-plane-gate (IPG) single and coupled quantum wire transistors were fabricated, and their basic transport properties of the quantum devices were investigated. The IPG structure realizes strong electron confinement in contrast to conventional split-gate structure. For the single quantum wire transistor, quantized conductance was observed at low temperature and possesses the temperature dependence. Observed temperature dependence was consistent with theoretical prediction based on TL-liquid picture. The coupled quantum wire transistor shows peaks and dips in the output characteristics with changing gate bias. This is explained in terms of coupled transport taking place at the certain gate bias.
