ABSTRACT
In this work we show that the morphological and optical properties of InAs/GaAs self-assembled quantum dots are strongly affected if a growth interruption is applied during the self-assembly process. A PL red-shift and a dot size increase result as a consequence of the growth interruption. These effects are pronounced for dots grown on high-index planes, where the surface configuration and In segregation and desorption effects play an important role in the dot self-assembling process.
