ABSTRACT
We present a theoretical study of capacitance experiments including a double array of InAs quantum dots in a fully quantum framework. The derivated analytical relations allow to characterize the structures (positions, heights, dispersions of peaks and plateaus) in the experimental spectrum as a function of the intrinsic parameters (number and size of dots, capacitor surface, ...). Especially we point out the importance of the capacitor feedback during the electron filling either related to the dot states or to the wetting layer states.
