ABSTRACT
Nanometer-scale InGaAs dots on InP (001) have been successfully obtained with lattice-matching growth condition by droplet heteroepitaxy using organometallic vapor phase epitaxy, and studied by atomic force microscope (AFM) and room-temperature photoluminescence (PL). AFM observation reveals that the dots are 3-12 nm in height and 55-85 nm in base diameter. In PL measurements, luminescence from the dots appears at longer wavelength than that expected for the bulk alloy, which is discussed in relation to composition gradient in the dots.
