Formation of InAs dots including Mn atoms by metalorganic molecular beam epitaxy and etching

InAs quantum dot structures including Mn atoms are fabricated on GaAs substrate by MOMBE (metalorganic molecular beam epitaxy) method. Mn atoms are first deposited on GaAs substrate and InAs dots are grown at this Mn atoms nuclei using TMIn (trimethylindium) and TDMAAs (trisdimethylaminoarsenic) sources. Large size InAs dots are formed together with StranskiKrastanov mode grown small size InAs dots. Only large size InAs dot structures including Mn atoms are left to remain by in-situ etching with BDMAAsCl (bisdimethylaminoarsenicchloride) etchant beam. Magnetic signals are observed only at this InAs dots by MFM (Magnetic Force Microscopy).