ABSTRACT
Temperature dependent characteristics of the self-formed GaAs island laser on a Si substrate by metal-organic chemical vapor deposition (MOCVD) using droplet epitaxy are studied. Also, a comparison of the results with the conventional quantum well (QW) laser is presented. The island laser on Si showed higher characteristic temperature (230 K) as well as improved reliability compared with those of the QW laser on Si, due to the reduction of the dislocation numbers in the active region. Also, the temperature dependent quantum efficiency and the gain coefficient of the island laser on Si are higher than those of the conventional QW laser on Si.
