GaAsP Visible Light Emitting Diodes for Integration with Si Devices

GaAs_{1- x} P _x (0.2< x <0.6) was grown with a GaP buffer layer by metalorganic molecular beam epitaxy(MOMBE) for a light emitting device on Si. The growth condition was determined based on in-situ RHEED, ex-situ AFM and X-ray diffraction. The epilayer on Si showed photoluminescence at a wavelength close to its band gap, and showed high resistivity. P-type and n-type doping were achieved with Zn and Sn, respectively. A GaAs_0.72P_0.28 diode on GaP emitted visible light at 1.83eV at 77K. A GaAs_0.88P_0.12 diode on Si showed infrared light emission at room temperature.