ABSTRACT
An in-situ mesa etching cum regrowth in a Hydride Vapour Phase Epitaxy (HVPE) reactor is demonstrated. Influence of HC1 and PH3 on the etching behaviour of surfaces with SiNx stripes along [110] and [ 110] directions has been studied and qualitative etching mechanisms are proposed. Our results show that the etched depth, undercut and mesa shape can be controlled independently. The cross-section of an insitu etched and regrown mesa shows no voids and good planarization, indicating the potential of this method. Results of buried heterostructure lasers fabricated by this method are presented.
