ABSTRACT
Alternative injection of triethylindium and tertiarybutylphosphine without pre-cracking has been used for molecular layer epitaxy to realize a monolayer growth of InP. The growth rate of around 0.7 monolayer/cycle, which was independent of injection time and pressure of triethylindium, was achieved. The self-limiting growth of InP in ultra-high vacuum was achieved on a (001) InP substrate for the first time to our knowledge. The surface morphology of the InP layers grown with the self-limiting fashion was specular at a specific growth-temperature range between 320 and 340 °C. No deposition of poly-crystalline on a silicon nitride film partially covering the substrate for selective area epitaxy was observed in any growth conditions studied.
