ABSTRACT
We studied the nitrogen incorporation behavior in bulk epitaxial thin films of GalnNAs grown by low pressure MOVPE using tertiary buty larsine (TBAs) and dimethylhydrazine (DMHy) as V-precursors. Besides increase of the molar flow ratio of DMHy, increasing the growth rate and decreasing the growth temperature were found to enhance the nitrogen incorporation in GalnNAs. In view of the nitrogen incorporation behavior, GalnNAs appeared to be different from In-free GaNAs, owing to the nature of pyrolysis reactions between In and N precursors at surface. Furthermore, we observed the 1.3 ftm photoluminescence peak at RT for the GaAs-lattice-matched Ga0.83In0.17N0.06As0.94.
