ABSTRACT
Pt, Ni, Co and Sn Schottky barriers were formed on n-GaAs by an in situ electrochemical process which consists of anodic etching and subsequent metal deposition in the same electrolyte. All the fabricated diodes showed nearly ideal thermionic emission transport. The Schottky barrier heights were found to be strongly dependent on the metal work function, giving a large value of slope factor of S =0.18-0.55. The result was far away from the recent prediction based on MIGS model. Based on SEM/ AFM, XPS and Raman measurements, the result was explained by the DIGS model.
