ABSTRACT
A cathodoluminescence (CL) study of ZnSe compound semiconductor in the scanning electron microscope (SEM) is reported. With the polycrystalline samples, deep-level emissions prevail over the band-edge emission in the room-temperature spectrum. As the sample temperature is lowered, the edge emission increasesbut deep-level emissions decrease. In the case of monocrystalline ZnSe samples, the band-edge emission is dominant over deep-level luminescence even at room temperature.However, nonuniform CL is still observable in the high-quality monocrystalline ZnSe layers grown on GaAs substrates.
