In situ microsectioning and imaging of semiconductor devices using a scanning ion microscope

In the scanning ion microscope, a finely focused ion probe incident on the specimen liberates electrons which are collected to form the image. Topographical detail can be examined in semiconductor devices and circuits. A factor determining the image-forming signal is the voltage distribution over the specimen surface, so the scanning ion microscope can be applied to the examination of semiconductor devices using voltage contrast. The ion probe can be used for precisely controlled material removal by sputtering, to expose buried detail or to cut microsections. Voltage contrast can also be seen in microsections of semiconductor devices and integrated circuits.