ABSTRACT
Classification of the dislocations in LEC-grown In-alloyed GaAs bulk crystals is discussed by reference to their configurations, especially taking notice of the way in which dislocations can be incorporated into the bulk. Besides the dislocations of pure edge character originating at the seed-on end and the cone and propagating nearly along the normal to the solid/liquid interface, there appear to be two types of slipping dislocations and here different thermal stress fields may be responsible for their creation and movement. Cross slip clearly plays a role in the complicated dislocation arrangements in GaAs crystals.
