ABSTRACT
The InGaAs growth in valleys of corrugated InP substrates is vital to fabricating quantum wire structures for optical device applications. The shape of such corrugations is easily deformed at fairly low temperatures, however, we found that coating the corrugation with an ultra-thin GaAs pregrowth layer at a low temperature effectively preserves the shape. Adding this new process enabled us to grow high-quality wire-shaped InGaAs embedded in InP and observe intense photo luminescence from the InGaAs wires.
