ABSTRACT
The atomic layer epitaxy (ALE) growth and characterization of InAs/GaAs heterostructures and quantum wells (QW) are presented. Trimethylgallium, Trimethylindium and AsH3 were used in a vertical atmospheric pressure metalorganic vapor phase epitaxy (MOVPE) system. Conditions for the successful ALE growth for heterostructures and QWs by switching the gas and the growth temperature are clarified. The structures were characterized by the Hall effect, quantum Hall effect and photoluminescence (PL) measurements.
