ABSTRACT
Supplemental radicals are demonstrated to be a method of enhancing the low temperature growth rate in organometallic vapor-phase epitaxy. This may prove an attractive alternative to the use of lasers and plasmas, reported earlier. t-C4H9 radicals, produced from the pyrolysis of azo-t-butane ((t-C4H9)2N2), have been used to assist the growth of GaAs from trimethylgallium and arsine. The epilayer growth rates at temperatures below 500°C are significantly enhanced by the presence of the radicals; at 450°C, the growth rate is increased by a factor of 6. The surface morphologies are also improved. X-ray diffraction results confirm that the layers are single-crystalline GaAs.
