Extremely uniform growth on 3-inch diameter InP substrates by omvpe for N-AlInAs/GaInAs hemt application

Highly uniform GaInAs, AlInAs and GaInAs/InP MQW structures with excellent electrical and optical qualities were grown on 3-inch diameter InP substrates by low pressure OMVPE. The undoped GaInAs layer showed an electron mobility of 12,000 cm²/Vs with a carrier density of 7×10¹⁴ cm⁻³ at room temperature. The variation of lattice mismatch across 3-inch diameter substrates was less than ±3×10⁻⁵ both for GaInAs and AlInAs layers. An excellent thickness uniformity with a fluctuation within ±1% was obtained for the GaInAs/InP MQW structure. The doping uniformity of Si-doped AlInAs was ±5%. Si-doped AlInAs/GaInAs HEMTs grown on a 3-inch diameter InP substrate showed the uniform threshold voltage with a standard deviation of 5%.