1.3 μm luminescence in (InAs) n /(GaAs) n strained quantum-well structures grown on GaAs

Optical emission from pseudomorphic InGaAs-on-GaAs quantum-well heterostructures has been extended to useful wavelengths (1.3 μm) by replacing an In_xGa_1−xAs random alloy quantum well with an (InAs)_n/(GaAs)_n short-period superlattice (SPS). With the same quantum-well width, the photoluminescence peak wavelength of the SPS structure is always longer than that of the In_0.5Ga_0.5As random-alloy structure. Strong photoluminescence was observed in (InAs)_n/(GaAs)_n SPS quantum wells with thicknesses up to 72 Å. The longest optical-emission wavelength observed at room temperature in (InAs)_n/(GaAs)_n SPS quantum-well structures was 1.34 μm.