ABSTRACT
Lateral quantum well (QW) structures with periodicities as small as ~200Å were formed in vertical (GaAs)n/(InAs)n and (GaP)n/(InP)n short-period-superlattices (SPS) grown on nominally (100) InP and GaAs substrates using solid and gas source molecular beam epitaxy techniques, respectively. Both InGaAs and InGaP ordered vertical superlattice layers were found to have a growth-induced lateral periodic modulation of the composition along the [ 1 ¯ https://s3-euw1-ap-pe-df-pch-content-public-p.s3.eu-west-1.amazonaws.com/9781003069638/440efdcf-c2ed-414a-bdad-7c98e059177f/content/eq393.tif"/> 10] direction and form parabolic-shaped lateral QWs. When the InGaP QW structure was excited with laser light along [110] and [ 1 ¯ https://s3-euw1-ap-pe-df-pch-content-public-p.s3.eu-west-1.amazonaws.com/9781003069638/440efdcf-c2ed-414a-bdad-7c98e059177f/content/eq394.tif"/> 10] directions, strong anisotropy was observed in the intensity ratio of the electron-to-light-hole and electron-to-heavy-hole transitions. This measurement confirms the existence of lateral two-dimensional quantum confinement in vertical SPS structures.
