An overview of the electronic properties of InAs1−x Sb x strained-layer superlattices (0 ⩽ x ⩽ 1)

Long wavelength infrared photoluminescence, magneto-transmission, and detector spectral response measurements have been used to characterize the electronic properties of InAs_1−xSb_x/InAs_1−ySb_y strained-layer superlattices (SLSs) ranging throughout much of the In(AsSb) ternary system. We find that there is a large type II band offset in the Sb-rich (x, y ≥ 0.8) SLSs. Ordering and further bandgap reduction is observed in As-rich (x, y = 0.5 − 0.4) SLSs. In either Sb-rich or As-rich structures, optical absorption is readily extended to wavelengths greater than 10 μm.